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The XC61FN2012MR-G series are highly accurate, low power consumption voltage detectors, manufactured using CMOS and laser trimming technologies. A delay circuit is built-in to each detector.
Detect voltage is extremely accurate with minimal temperature drift.
Both CMOS and N-ch open drain output configurations are available. Since the delay circuit is built-in, peripherals are unnecessary and high density mounting is possible.
XC61FN2012MR-G特點：
高電壓檢測精度: ±2%
低消耗電流: 1.0μA(TYP.)[VIN=2.0V]
檢測電壓范圍: 能夠在1.6V～6.0V范圍內(nèi)以0.1V間隔設(shè)定
工作電壓范圍: 0.7V～10.0V
檢測電壓溫度特性: ±100ppm/℃(TYP.)
內(nèi)置延遲電路: 1ms～50ms 50ms～200ms 80ms～400ms
輸出形式; N溝道開漏/CMOS輸出
小型封裝 : SOT-23, SOT-89, TO-92
XC61FN2012MR-G應用：微處理器復位電路、內(nèi)存?zhèn)溆秒姵仉娐贰⑸想姀臀浑娐贰㈦娫垂收蠙z測、系統(tǒng)電池壽命和充電電壓監(jiān)視、延遲電路
